protection products 1 www.semtech.com protection products - microclamp ? uclamp3311pq low voltage clamp ? for automotive applications description features dimensions schematic & pin configuration revision 7/282011 the clamp ? 3311pq transient voltage suppressor is specifically designed to protect sensitive components which are connected to low-voltage data and transmis- sion lines from overvoltage caused by esd (electro- static discharge), cde (cable discharge events), and eft (electrical fast transients). it is rated to grade 3 of aec-q100 for use in automotive applications. the clamp ? 3311pq is constructed using semtech?s proprietary epd process technology. the epd process provides low standoff voltages with significant reduc- tions in leakage currents and capacitance over silicon- avalanche diode processes. they feature a true operating voltage of 3.3 volts for superior protection when compared to traditional pn junction devices. the clamp3311pq is in an 2-pin slp1006p2 pack- age. it measures 1.0 x 0.6 x 0.5mm. the leads are spaced at a pitch of 0.65mm and are finished with lead-free nipdau. each device will protect one line operating at 3.3 volts. it gives the designer the flexibil- ity to protect single lines in applications where arrays are not practical. they may be used to meet the esd immunity requirements of iec 61000-4-2. the combi- nation of low voltage, small size and high esd surge capability makes them ideal for protection of sensitive electronics in automotive applications. applications mechanical characteristics ? automotive applications ? low voltage data lines ? 10/100 ethernet ? transient protection for data lines to iec 61000-4-2 (esd) 25kv (air), 20kv (contact) iec 61000-4-4 (eft) 40a (tp = 5/50ns) cable discharge event (cde) ? qualified to aec-q100, grade 3 ? protects one data line ? low clamping voltage ? working voltage: 3.3v ? low leakage current ? solid-state silicon-avalanche technology ? slp1006p2 package ? pb-free, halogen free, rohs/weee compliant ? nominal dimensions: 1.0 x 0.6 x 0.5 mm ? lead finish: nipdau ? molding compound flammability rating: ul 94v-0 ? marking : marking code ? packaging : tape and reel slp1006p2 (bottom view) maximum dimensions (mm) 0.65 0.50 0.60 1.0
2 ? 2011 semtech corp. www.semtech.com protection products uclamp3311pq absolute maximum rating electrical characteristics (t=25 o c) r e t e m a r a pl o b m y ss n o i t i d n o cm u m i n i ml a c i p y tm u m i x a ms t i n u e g a t l o v f f o - d n a t s e s r e v e rv m w r 3 . 3v e g a t l o v h g u o r h t - h c n u pv t p i t p c 5 2 = t , a 2 =5 . 3v e g a t l o v h g u o r h t - h c n u pv t p i t p c 5 8 = t , a 2 =5 . 3v e g a t l o v k c a b - p a n sv b s i b s a m 0 5 =8 . 2v t n e r r u c e g a k a e l e s r e v e ri r v m w r c 5 2 = t , v 3 . 3 =5 0 . 05 . 0a t n e r r u c e g a k a e l e s r e v e ri r v m w r c 5 8 = t , v 3 . 3 =1 . 01a e g a t l o v g n i p m a l cv c i p p s 0 2 / 8 = p t , a 1 =8v e g a t l o v g n i p m a l cv c i p p s 0 2 / 8 = p t , a 5 =8 1v e c n a t i c a p a c n o i t c n u jc j d n g o t n i p o / i v r z h m 1 = f , v 0 = 2 15 1f p d n g o t n i p o / i v r z h m 1 = f , v 3 . 3 = 0 1f p g n i t a rl o b m y se u l a vs t i n u ) s 0 2 / 8 = p t ( r e w o p e s l u p k a e pp k p 0 9s t t a w ( t n e r r u c e s l u p k a e p m u m i x a m) s 0 2 / 8 = p ti p p 5s p m a ) r i a ( 2 - 4 - 0 0 0 1 6 c e i r e p d s e ) t c a t n o c ( 2 - 4 - 0 0 0 1 6 c e i r e p d s e v d s e 5 2 - / + 0 2 - / + v k e r u t a r e p m e t g n i t a r e p ot j 5 8 + o t 0 4 -c e r u t a r e p m e t e g a r o t st g t s 0 5 1 + o t 5 5 -c
3 ? 2011 semtech corp. www.semtech.com protection products uclamp3311pq typical characteristics non-repetitive peak pulse power vs. pulse time 0 10 20 30 40 50 60 70 80 90 100 110 0 25 50 75 100 125 150 ambient temperature - t a ( o c) % of rated power or i pp power derating curve clamping voltage vs. peak pulse current reverse leakage current vs. temperature 0.01 0.1 1 10 0.1 1 10 100 1000 pulse duration - tp (us) peak pulse power - p pp (kw) normalized capacitance vs. reverse voltage insertion loss s21 start . 030 mhz 3 stop 000 . 000 000 mhz ch1 s21 log 6 db / ref 0 db 1: -3.0120 db 616.229 mhz 2: -3.8355 db 900 mhz 3: -5.9804 db 1.8 ghz 4: -8.1629 db 2.5 ghz 0 db -6 db -12 db -18 db -24 db -30 db -36 db 1 ghz 100 mhz 3 ghz 10 mhz 1 mhz 1 2 3 4 0 5 10 15 0.0 1.0 2.0 3.0 4.0 5.0 6.0 peak pulse current - i pp (a) clamping voltage - v c (v) t a =25 o c 8/20 s pulse 0.0 0.3 0.5 0.8 1.0 1.3 0.0 1.0 2.0 3.0 4.0 reverse voltage - v r (v) capacitance (normalized to v r =0) t a =25 o c f = 1 mhz 0 50 100 150 -75 -25 25 75 125 175 temperature ( o c) leakage current (na)
4 ? 2011 semtech corp. www.semtech.com protection products uclamp3311pq device connection options the clamp3311pq is designed to protect one data line operating up to 3.3 volts. it will present a high impedance to the protected line up to 3.3 volts. it will ?turn on? when the line voltage exceeds 3.5 volts. the device is bidirectional and may be used on lines where the signal polarity is above and below ground. these devices are not recommended for use on dc power supply lines due to their snap-back voltage characteristic. epd tvs characteristics these devices are constructed using semtech?s proprietary epd technology. the structure of the epd tvs is vastly different from the traditional pn-junction devices. at voltages below 5v, high leakage current and junction capacitance render conventional ava- lanche technology impractical for most applications. however, by utilizing the epd technology, these devices can effectively operate at 3.3v while maintaining excellent electrical characteristics. the epd tvs employs a complex nppn structure in contrast to the pn structure normally found in tradi- tional silicon-avalanche tvs diodes. the epd mecha- nism is achieved by engineering the center region of the device such that the reverse biased junction does not avalanche, but will ?punch-through? to a conduct- ing state. this structure results in a device with supe- rior dc electrical parameters at low voltages while maintaining the capability to absorb high transient currents. circuit board layout recommendations for suppres- sion of esd. good circuit board layout is critical for the suppression of esd induced transients. the following guidelines are recommended: z place the tvs near the input terminals or connec- tors to restrict transient coupling. z minimize the path length between the tvs and the protected line. z minimize all conductive loops including power and ground loops. z the esd transient return path to ground should be kept as short as possible. z never run critical signals near board edges. z use ground planes whenever possible. applications information device schematic & pin configuration i pp i sb i pt i r v rwm v v pt v c v f i f sb epd tvs iv characteristic curve
5 ? 2011 semtech corp. www.semtech.com protection products uclamp3311pq outline drawing - slp1006p2 land pattern - slp1006p2 inches .026 bsc aaa n e l e .008 .020 dim a min .018 .016 0.30 0.70 0.20 0.50 .003 2 .010 .024 .012 .028 0.08 2 0.25 0.60 0.65 bsc millimeters max 0.55 0.55 dimensions min 0.45 nom .020 .020 max .022 .022 nom 0.40 0.50 0.50 controlling dimensions are in millimeters (angles in degrees). notes: 1. bottom view top view a b c b aaa c seating plane bbb c a b d .035 .039 .043 0.90 1.10 1.00 .004 bbb 0.10 d e a1 a bxn e a1 .000 .001 .002 0.00 0.03 0.05 r 2x l pin 1 id r .002 .004 .006 0.05 0.10 0.15 this land pattern is for reference purposes only. consult your manufacturing group to ensure your notes: 2. dim y g c millimeters inches (0.85) .055 .012 .022 (.033) 1.40 0.55 0.30 dimensions company's manufacturing guidelines are met. z y (c) g z x .024 0.60 x 1. controlling dimensions are in millimeters (angles in degrees).
6 ? 2011 semtech corp. www.semtech.com protection products uclamp3311pq marking code ordering information r e b m u n t r a p r e p y t q l e e r l e e r e z i s t c t . q p 1 1 3 3 p m a l c u0 0 0 , 3h c n i 7 microclamp, uclamp and clamp are trademarks of semtech corporation e p a t h t d i w ) x a m ( , bd1 de f p0 p2 ptw m m 8 m m 2 . 4 ) 5 6 1 . ( m m 1 . 0 + 5 . 1 m m 0 . 0 - 5 0 0 . + 9 5 . 0 ( ) 0 0 0 . - m m 4 . 0 5 2 . 0 ) 1 3 0 . ( 0 1 . 0 5 7 . 1 m m ) 4 0 0 . 9 6 0 . ( 5 0 . 0 5 . 3 m m ) 2 0 0 . 8 3 1 . ( 0 1 . 0 0 . 4 m m - 0 0 . 7 5 1 . ( ) 4 1 . 0 0 . 4 m m - 0 0 . 7 5 1 . ( ) 4 5 0 . 0 0 . 2 m m ) 2 0 0 . 9 7 0 . ( 2 0 . 0 4 5 2 . 0 ) 6 1 0 . ( m m m m 0 . 8 m m 3 . 0 + m m 1 . 0 - ) 2 1 0 . 2 1 3 . ( 0 a0 b0 k m m 0 1 . 0 - / + 9 6 . 0m m 0 1 . 0 - / + 9 1 . 1m m 0 1 . 0 - / + 6 6 . 0 x notes: 1) device is electrically symmetrical tape and reel specification contact information semtech corporation protection products division 200 flynn road, camarillo, ca 93012 phone: (805)498-2111 fax (805)498-3804
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